fujitsu semiconductor fact sheet november, 2010 1/2 copyright?2010 fujitsu semiconduct or limited all rights reserved np501-00004-0v01-e fram MB85R256G MB85R256G is a 256k-bits fram lsi using the ferroelectric proce ss and cmos process technologies for forming the nonvolatile memory cells. because fram is able to write high-speed even though a nonvolat ile memory, it is suitable for the log management and the storage of the re sume data, etc. MB85R256G uses a pseudo-sram interface compatible with conventi onal asynchronous sram. features ? bit configuration 32,768 words 8 bits ? read/write endurance 10 10 times/bit ? peripheral circuit cmos construction ? operating power supply voltage 2.7 to 3.6v ? operating temperature range -40 to +85 ? data retention 10 years (+70) ? package 28-pins, sop flat package 28-pins, tsop(1) flat package ordering information package example of reference product name package remarks tbd plastic?sop,28-pins (fpt-28p-m17) 8.60mm17.75mm,1.27mm pitch - tbd plastic?tsop,28-pins (fpt-28p-m19) 11.80mm8.00mm,0.55mm pitch - tbd plastic?sop,28-pins (fpt-28p-m17) 8.60mm17.75mm,1.27mm pitch embossed carrier tape plastic ? tsop28-pins (fpt-28p-m19)
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